In a pure silicon `(n_(i)=10^(16)//m^(3))` crystal at `300K, 10^(21)` atoms of phosphorus are added per cubic meter. The new hole concentration will be

In a pure silicon (n_(i)=10^(16)m^(-3)) crystal at 300 K, 10^(23) atoms of phosphorus are added per cubic meter. The new whole concentration will be

in a pure silicon ( n_i = (10^16)/m^3) crystal at 300 k , 10^21 atoms of phosphorous are added percubic meter. The new hole concetaration wil be.

In pure crystal of silicon at 300 K temperature having number of atom n_(i)=10^(16)m^(-3) . If 10^(21) atoms of phosphorus added per m^(3) then number of holes created will be …… / m^(3) .

Pure Si crystal at 300 k has 2.5 xx10^(28) atoms m^(-3) it is doped by 1 ppm concentration of pentavalent element As calculate the new concentration of electrons and holes take n_(i) =1.5 xx10^(16) m^(-3)

Estimate the proportion of boron impurity which will increase the conductivity of a pure silicon sample by a factor of 100.Assume that each boron atom creates a hole and the concentration of holes in pure silicon at the same temperature is 7xx10^15 holes per cubic meter. Density of silicon is 5xx10^28 atoms per cubic metre.