Home
Class 12
PHYSICS
If n(e) and n(h) be the number of electr...

If `n_(e)` and `n_(h)` be the number of electrons and drift velocity in a semiconductor. When the temperature is increased

A

`n_(e) "increasesand" v_(d) decreases`

B

`n_(e) "increasesand " v_(d) " incereases"`

C

Both `n_(e)and v_(d)` increases

D

Both `n_(e)and v_(d)`decreases

Text Solution

Verified by Experts

Promotional Banner

Topper's Solved these Questions

  • ROTATIONAL MOTION

    DISHA|Exercise physics|72 Videos
  • THERMAL EXPANSION AND CALORIMETRY

    DISHA|Exercise Physics|29 Videos

Similar Questions

Explore conceptually related problems

if n_(e) and v_(d) be the number of electrons and drift velocity in a semiconductor. When the temperature is increased.

If n_(e) and n_(h) are the number of electrons and holes in a semiconductor heavily doped with phosphorus, then

Let n_(e) and n_(b) are the number density of electrons and holes in extrinsic semiconductor then-

Let n_(p) and n_(e) be the number of holes and conduction electrons respectively in a semiconductor. Then

Let n_(p) and n_(e ) be the number of holes and conduction electrons respectively in a semiconductor. Then

Let n_(p) and n_(e) be the number of holes and conduction electrons respectively in a semiconductor. Then,

If N_(P) and N_(e) be the numbers of holes and conduction electrons in an extrinsic semiconductor, then

The relation between number of free electrons (n) in a semiconductor and temperature (T) is given by

Let n_(p) and n_(e) , be the numbers of holes and condution electrons in an intrinsic semiconductor

Lets n_p and n_e be the number of holes and conduction electrons in an extrinsic semiconductor.

DISHA-SEMICONDUCTOR-physics
  1. At zero Kelvin a piece of germanium

    Text Solution

    |

  2. Electronical configuration of germenium is 2,8,18 and 4. To make it ex...

    Text Solution

    |

  3. The intrinsic semiconductor becomes an insulator at

    Text Solution

    |

  4. Energy band in solids are a consequence of

    Text Solution

    |

  5. In energy band diagram, the energy gap for carbon (diamond)is....... .

    Text Solution

    |

  6. The valence band and conduction band of a solid overlap at low temper...

    Text Solution

    |

  7. Choose the correct statement

    Text Solution

    |

  8. If n(e) and n(h) be the number of electrons and drift velocity in a se...

    Text Solution

    |

  9. The reverse biasing in a PN junction diode

    Text Solution

    |

  10. Two PN-junction can be connected in series by three different methods ...

    Text Solution

    |

  11. The approximate ratio of resistance in the forward and reverse biase o...

    Text Solution

    |

  12. The dominant mechanisms for motion of charge carriers in forward and r...

    Text Solution

    |

  13. In a triclinic crystal system

    Text Solution

    |

  14. The correct cymbol for zener diode is

    Text Solution

    |

  15. In the given figure, which of the diodes are forward biased?

    Text Solution

    |

  16. Which of the following materials are crystalline?

    Text Solution

    |

  17. A piece of copper and the other of germanium are cooled from the room ...

    Text Solution

    |

  18. Assertion: The number of electrons in a p-type silicon semiconductor i...

    Text Solution

    |

  19. Assertion: The resistivity of a semiconductor increases with temperatu...

    Text Solution

    |

  20. Assertion: We can measure the potential barrier of a PN junction by pu...

    Text Solution

    |