The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon `P-N` junction are

Assertion:The dominant mechanism for motion of charge carriers in forward and reverse biased silicon P-N junction are drift in both forward and reverse biase. Reason: In reverse biasing, no current flow through the junction.

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N juntions are-

The question given below consist of an assertion (A) and a reason ( R). Use the following key to choose the appropriate answer to these questions from the codes (a), (b), ( c) and (d) given below: (a) Both A and R are true and R is the correct explanation of A. (b) Both A and R are true but R is NOT the correct explanation of A. (c) A is true but R is false. (d) A is false and R is also false. Assertion:The dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junction are drift in both forward and reverse bias. Reason: In reverse biasing no current flows through the junction.

the dominant mecahnisms for motion of chargecarriers in forward and reverse biased silicon p-n junctions are

What is forward and reverse biased in P.N. junction?

What accounts for the flow of charge carriers in forward and reverse biasing of sillicon P-N diode-