Home
Class 11
PHYSICS
On doping germanium with donor atoms of ...

On doping germanium with donor atoms of density `10^(17) cm^(-3)`, find its conductivity in mho/cm, if `mu=3800 cm^(2)//V-s`.

A

30.4

B

60.8

C

91.2

D

121.6

Text Solution

Verified by Experts

Promotional Banner

Topper's Solved these Questions

  • RAY OPTICS AND OPTICAL INSTRUMNTS

    DISHA|Exercise PHYSICS|44 Videos

  • SYSTEM OF PARTICLES AND ROTATIONAL MOTION

    DISHA|Exercise PHYSICS|45 Videos

Similar Questions

Explore conceptually related problems

On doping germanium with donor atoms of density 10^(17)cm^(-3) , find its conductivity if mobility of electrons is 3800 cm^(2)//V-s and intrinsic carrier concentration is 2.5xx10^(13)cm^(-3) . Also find the ratio of conductivity of doped germanium and pure germanium.

The number desnity of donor atoms which have to be added to an intrinsic germanium semiconductor to produce an n-type semiconductor of conductivity 5 ohm^(-1) cm^(-1) is axx10^(15)cm^(-3) . Given that the mobility of electron in n-type Ge is 3900 cm^(2)//Vs , Neglect the contribution of holes to conductivity. What is the integer value of a?

The electron mobility in N -type germanium is 3900cm^(2)//v-s and its conductivity is 6.24 mho//cm , then impurity concentration will be if the effect of cotters is negligible

(a) Find the conductivity of intrinsic silon at 300K . It is given that n_(i) at 300K in silicon is 1.5x10^(10)//cm ^(3) and the mobilities of electrons and holes in silicion are 1300cm^(2)//V-sec and 500 cm^(2)//V-sec respectively. (b) if donor type impurity is added to the extent of 1 impurity atom in 10^(8) sillicon atoms, find the conductivity. (c ) if acceptor inpurity is added to the extent of 1 impurity atom in 10^(8) silicon atoms,find the conductivuity. Given: number of atoms//m^(3) for Si=5xx10^(28)

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The conductivity of doped semiconductor (in Sm^(-1)) is

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) Ratio of conductivity of doped silicon and pure silicon semiconductor is

A semiconductor has an electron concentration of 8xx10^(13) per cm^(3) and a hole concentration of 5xx10^(12) per cm^(3) . The electron mobilityis 25,000 cm^(2)V^(-1)sec^(-1) and the hole mobility is 100cm^(2)V^(-1)sec^(-1) and the hole mobility is 100cm^(2)V^(-1)sec^(-1) (i) The semiconductor is n -type (ii) the semiconductor is p -type (iii) the conductivity is 320m mho cm^(-1) (iv) the conductivity is 80m mho cm^(-1)

DISHA-SEMICONDUCTOR-PHYSICS
  1. A diode having potential difference 0.5 V across its junction which do...

    Text Solution

    |

  2. In common emitter amplifier, the current gain is 62. The collector res...

    Text Solution

    |

  3. On doping germanium with donor atoms of density 10^(17) cm^(-3), find ...

    Text Solution

    |

  4. The voltage gain of an amplifier with 9% negative feedback is 10. The ...

    Text Solution

    |

  5. A system of four gates is set up as shown. The 'truth table' correspon...

    Text Solution

    |

  6. The intrinsic conductivity of germanium at 27^(@) is 2.13 mho m^(-1) a...

    Text Solution

    |

  7. The logic circuit shown below has the input waveforms ‘A’ and ‘B’ as s...

    Text Solution

    |

  8. Pure Si at 500K has equal number of electron (n(e)) and hole (n(h)) co...

    Text Solution

    |

  9. Which of the following statements is incorrect?

    Text Solution

    |

  10. The relation between number of free electrons (n) in a semiconductor a...

    Text Solution

    |

  11. If a PN junction diode of depletion layer width W and barrier height V...

    Text Solution

    |

  12. The circuit has two oppositively connected ideal diodes in parallel wh...

    Text Solution

    |

  13. For a transistor ampliflier in common emiter configuration for load im...

    Text Solution

    |

  14. A PN - junction has a thickness of the order of

    Text Solution

    |

  15. A working transitor with its three legs marked P, Q and R is tested us...

    Text Solution

    |

  16. If a p-n junction diode, a square input signal of 10 V is applied as s...

    Text Solution

    |

  17. When N-type of semiconductor is heated

    Text Solution

    |

  18. The ratio of electron and hole currents in a semiconductor is 7/4 and ...

    Text Solution

    |

  19. C and Si both have same lattice structure, having 4 bonding electrons ...

    Text Solution

    |

  20. Which one of the following represents forward bias diode?

    Text Solution

    |