Pure `Si` at `500K` has equal number of electron `(n_(e))` and hole `(n_(h))` concentration of `1.5xx10^(16)m^(-3)`. Dopping by indium. Increases `n_(h)` to `4.5xx10^(22) m^(-3)`. The doped semiconductor is of

Options

A. n-type with electron concentration `n_(e) = 5 xx 10^(22)m^(-3)`
B. p-type with electron concentration `n_(e) = 2.5 xx 10^(10) m^(-3)`
C. n-type with electron concentration `n_(e) = 2.5 xx 10^(23) m^(-3)`
D. p-type having electron concentration `n_(e) = 5 xx 10^(9) m^(-3)`