On doping germanium with donor atoms of density `10^(17) cm^(-3)`, find its conductivity in mho/cm, if `mu=3800 cm^(2)//V-s`.

On doping germanium with donor atoms of density 10^(17)cm^(-3) , find its conductivity if mobility of electrons is 3800 cm^(2)//V-s and intrinsic carrier concentration is 2.5xx10^(13)cm^(-3) . Also find the ratio of conductivity of doped germanium and pure germanium.

The intrinsic number density of charge carriers in a semiconductor is 2.5 xx 10^13 cm^-3 . It is doped with donor atoms of number density 1.25 xx 10^17cm^-3 , the ratio of conductivities of doped and intrinsic semiconductors is

The electron mobility in N -type germanium is 3900cm^(2)//v-s and its conductivity is 6.24 mho//cm , then impurity concentration will be if the effect of cotters is negligible

(a) Find the conductivity of intrinsic silon at 300K . It is given that n_(i) at 300K in silicon is 1.5x10^(10)//cm ^(3) and the mobilities of electrons and holes in silicion are 1300cm^(2)//V-sec and 500 cm^(2)//V-sec respectively. (b) if donor type impurity is added to the extent of 1 impurity atom in 10^(8) sillicon atoms, find the conductivity. (c ) if acceptor inpurity is added to the extent of 1 impurity atom in 10^(8) silicon atoms,find the conductivuity. Given: number of atoms//m^(3) for Si=5xx10^(28)

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The conductivity of doped semiconductor (in Sm^(-1)) is

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) Ratio of conductivity of doped silicon and pure silicon semiconductor is

Determine the number of density of donor atoms which have to be added to an intrinsic germanium semiconductor to produce an N-type semi-conductor of conductivity 6.4 Omega cm^(-1) . Given that mobility of electron in N-type Ge is 4000 cm^(2)//Vs . Neglect the contribution of holes. to conductivity.