Home
Class 12
PHYSICS
In semiconductor the concentrations of e...

In semiconductor the concentrations of electron and holes are `8xx10^(18)//m^(3)` and `5xx10^(18)//m` respectively. If the mobilities of electrons and hole are `2.3 m^(2)//`volt-sec and `0.01m^(2)//` volt-sec respectively, then semicondutor is

A

N - type and its resistivity is `0.34` ohm-metre

B

P - type and its resistivity is `0.034` ohm-metre

C

N - type and its resistivity is `0.034` ohm-metre

D

P - type and its resistivity is `3.40` ohm-metre

Text Solution

Verified by Experts

The correct Answer is:
A
Promotional Banner

Topper's Solved these Questions

  • MASTER PRACTICE PROBLEM

    BANSAL|Exercise Subjective|107 Videos
  • FLUID MECHANICS

    BANSAL|Exercise PYQS AIEEE|10 Videos
  • SEMICONDUCTORS

    BANSAL|Exercise CBSE Question|32 Videos

Similar Questions

Explore conceptually related problems

In a semiconductor the concentrations of electrons and holes are 8xx10^(18)//m^(3) and 5xx10^(18)//m^(3) respectively. If the mobilities of electrons and hole are 2.3m^(2)/"volt-sec" and 0.01m^(2)//"volt-sec" respectively, then semiconductor is-

A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area 1 cm^(2) and thickness 0.5 mm . If the concentration of electrons in Ge is 2xx10^(19)//m^(3) and mobilities of electrons and holes are 0.36(m^(2))/(vol t-sec) and 0.14 (m^(2))/(vol t-sec) respectively, then the current flowing through the plate will be

The densities of electrons and holes in an extrinsic semiconductor are 7.5xx10^(13)cm^(-3) and 4.5 xx 10^(12)cm^(-3) respectively. The mibilities of electrons and holes are 23xx10^(3)cm^(2)//V-s and 10^(2)cm^(2)//V-s respectively. What is the type of semiconductor? Find the resistivity of this semiconductor.

A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area 1cm^(2) and thickness 0.5 mm. if the concentration of electrons in Ge is 2xx10^(19)//m^(3) and mobilities of electrons and holes are 0.36 (m^(2))/("volt-sec") and 0.14(m^(2))/("volt-sec") respectivity, then the current flowing through the plate will be-

A semiconductor is known to have an electron concentric of 8xx10^(13)//cm^(3) and hole concentration of 5xx10^(12)//cm^(3) . The semiconductor is

The contribution in the total current flowing through a semiconductor due to electrons and holes are 3/ 5 and 2/ 5 respectively. If the drift velocity of electrons is 2 times that of holes at this temperature, then the ratio of concentration of electrons and holes is

The contribution in the total current flowing through a semiconductor due to electrons and holes are 3/4 and 1/4 respectively. If the drift velocity of electrons is 5/2 times that of holes at this temperature, then the ratio of concentration of electrons and holes is

An intrinsic semiconductor has a resistivity of 0.50 Omega m at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are 0.39 m^2 V^(-1) s^(-1) and 0.11 m^2 V^(-1) s^(-1) respectively

BANSAL-MASTER PRACTICE PROBLEM-Additional topic
  1. The combination of gates shown below yields .

    Text Solution

    |

  2. Truth table for system of four NAND gates as shown in figure is : .

    Text Solution

    |

  3. In semiconductor the concentrations of electron and holes are 8xx10^(1...

    Text Solution

    |

  4. A potential difference of 2V is applied between the opposite faces of ...

    Text Solution

    |

  5. The main cause of avalence breakdown is

    Text Solution

    |

  6. A cube of germanium is placed between the poles of a magnet and a volt...

    Text Solution

    |

  7. In the given figure, which of the diodes are forward biased?

    Text Solution

    |

  8. Current in the circuit will be

    Text Solution

    |

  9. The diode used in the circuit shown in the figure has a constant volta...

    Text Solution

    |

  10. In the following circuits PN-junction diodes D(1), D(2) and D(3) are i...

    Text Solution

    |

  11. A sinusoidal voltage of peak value 200 volts is connected to a diode a...

    Text Solution

    |

  12. In the figure an A.C of rms voltage 200 volt is appled to the circuit ...

    Text Solution

    |

  13. In the circuit shown in figure, Voltage V(0) is

    Text Solution

    |

  14. In the given circuit V(O(1))&V(O(2)) are

    Text Solution

    |

  15. Which is the correct diagram of a half- wave reactifier?

    Text Solution

    |

  16. In the diagram, the input is across the terminals A and C and the outp...

    Text Solution

    |

  17. A full wave rectifier circuit along with the input and output are show...

    Text Solution

    |

  18. An NPN-transistor circuit is arranged as shown in figure. It is

    Text Solution

    |

  19. Given below are four logic gates symbol (figure). Those for OR, NOR an...

    Text Solution

    |

  20. Which of the following gates will have an output of 1

    Text Solution

    |