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In forward biasing of the p-n junction:...

In forward biasing of the p-n junction:

A

the positive terminal of the battery is connected to n-side and the depletion region becomes thin

B

the positive terminal of the battery is connected to n-side and the depletion region becomes thick

C

the positive terminal of the battery is connected to p-side and the depletion region become thin

D

the positive terminal of the battery is connected to p-side and the depletion region becomes thick

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The correct Answer is:
C
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NEET PREVIOUS YEAR (YEARWISE + CHAPTERWISE)-SOLID AND SEMICONDUCTOR DEVICES-Exercise
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  3. In forward biasing of the p-n junction:

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  4. Which one of the following statement is false?

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  9. A transistor is operated in common emitter configuration at V(c)=2 V s...

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  10. The symbolic representation of four logic gates are given in Fig.The l...

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  11. A p-n photodiode is fabricated from a semiconductor with a band gap of...

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  12. The circuit is equivalent to

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  13. A p-n photodiode is made of a material with a band gap of 2.0 eV. The ...

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  14. The voltage gain of an amplifier with 9% negative feedback is 10. The ...

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  15. If the lattice parameter for a crystalline structure is 3.6Å, then the...

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  16. For a cubic crystal structure which one of the following relations ind...

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  17. In the energy band diagram of a material shown below, the open circles...

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  18. In the following circuit, the output Y for all possible inputs A and B...

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  19. The following figure shows a logic gate circuit with two inputs A and ...

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  20. A forward biased diode is

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