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A p-n photodiode is fabricated from a se...

A `p-n` photodiode is fabricated from a semiconductor with a band gap of `2.5 eV`. It can detect a signal of wavelength

A

`6000 Å`

B

`4000nm`

C

`6000nm`

D

`4000 Å`

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The correct Answer is:
D
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A p-n photodiode is fabricate from a semiconductor with a band gap of 2.5eV . It can detect a singal of wavelength

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A p - n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Which of the following wavelengths it can detect?

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NEET PREVIOUS YEAR (YEARWISE + CHAPTERWISE)-SOLID AND SEMICONDUCTOR DEVICES-Exercise
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