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Application of a forward biase to a "p-n...

Application of a forward biase to a `"p-n"` junction:

A

increases the number of donors on the n-side

B

increases the electric field in the depletion zone

C

increases the potential difference across the depletion zone

D

widens the depletion zone

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The correct Answer is:
A
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NEET PREVIOUS YEAR (YEARWISE + CHAPTERWISE)-SOLID AND SEMICONDUCTOR DEVICES-Exercise
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  15. For a transistor (I(C))/(I(E))=0.96, then current gain for common emit...

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  16. The number of atoms per unit cell in bcc lattice is

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  17. In bcc structure of lattice constant a, the minimum distance between a...

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