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Barrier potential of a "p-n" junction di...

Barrier potential of a `"p-n"` junction diode does not depend on

A

forward bias

B

doping density

C

diode design

D

temperature

Text Solution

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The correct Answer is:
C
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The barrier potential of a p-n -junction depends on (i) Type of semiconductor material (ii) Amount of doping (iii) Temperature which of the following is correct?

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NEET PREVIOUS YEAR (YEARWISE + CHAPTERWISE)-SOLID AND SEMICONDUCTOR DEVICES-Exercise
  1. A npn transistor conducts when

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  2. If a full wave reactifier circuit is operating from 50 Hz mains, the f...

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  3. Barrier potential of a "p-n" junction diode does not depend on

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  4. Following diagram performs the logic function of

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  5. For the given circuit of PN-junction diode, which of the following sta...

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  6. For conduction in a "p-n" junction, the biasing is

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  7. For a transistor (I(C))/(I(E))=0.96, then current gain for common emit...

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  8. The number of atoms per unit cell in bcc lattice is

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  9. In bcc structure of lattice constant a, the minimum distance between a...

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  10. If internal resistance of cell is negligible, then current flowing thr...

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  11. In a common-base configuration of a transistor (Delta i)/(Delta i(e)) ...

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  12. Si and Cu are cooled to a temperature of 300 K, then resistivity

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  13. In which of the following figures, junction diode is forward biased?

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  14. The truth table given below represents

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  15. If alpha and beta current gains in common-base and common-emitter conf...

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  16. The following circuit represents:

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  17. In P-type semiconductor the majority and minorty charge carriers are r...

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  18. In forward bias, the width of potential barrier in a P-N junction diod...

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  19. Depletion layer consists of

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  20. In junction diode, the holes are due to

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