Home
Class 12
PHYSICS
In a common-base configuration of a tran...

In a common-base configuration of a transistor `(Delta i)/(Delta i_(e)) = 0.98`, then current gain in common emitter configuration of transistor will be

A

49

B

98

C

4.9

D

24.5

Text Solution

Verified by Experts

The correct Answer is:
A
Promotional Banner

Topper's Solved these Questions

  • ROTATIONAL MOTION

    NEET PREVIOUS YEAR (YEARWISE + CHAPTERWISE)|Exercise Exercise|74 Videos
  • THERMAL AND CHEMICAL EFFECTS OF CURRENt

    NEET PREVIOUS YEAR (YEARWISE + CHAPTERWISE)|Exercise Exercise|34 Videos

Similar Questions

Explore conceptually related problems

For a common base configuration of PNP transistor (l_(C))/(l_(E))=0.98 , then maximum current gain in common emitter configuration will be

For a transistor (I_(C))/(I_(E))=0.96 , then current gain for common emitter configuration

If alpha and beta current gains in common-base and common-emitter configuration of a transistor, then beta is equal to

Current gain of common base configuration of a transistor is 0.9. It is used in common emitter configuration. Input and output resistances are 0.6k Omega , 50k Omega respectively. Find power gain.

In a common base configuration (transistor circuit) I_(E)=1mA, I_(C)=0.95mA . The value of base current is

In a transistor the current amplification alpha is '0.9', when connected in common base configuration. Now if the same transistor is connected in common emitter configurations and the change in ouput current is 4.5 mA, then the corresponding charnge in the input current is

In common - emitter configuration of a transistor, the base current I_(E)=2muA, alpha=0.9 then the value of I_(C) is

For a transistor x=(1)/(alpha)&y=(1)/(beta) where alpha & beta are current gains in common base and common emitter configuration. Then

The current gain of the amplifier in the common emitter configuration is 80. What is its current gain in common base configuration ?

NEET PREVIOUS YEAR (YEARWISE + CHAPTERWISE)-SOLID AND SEMICONDUCTOR DEVICES-Exercise
  1. In bcc structure of lattice constant a, the minimum distance between a...

    Text Solution

    |

  2. If internal resistance of cell is negligible, then current flowing thr...

    Text Solution

    |

  3. In a common-base configuration of a transistor (Delta i)/(Delta i(e)) ...

    Text Solution

    |

  4. Si and Cu are cooled to a temperature of 300 K, then resistivity

    Text Solution

    |

  5. In which of the following figures, junction diode is forward biased?

    Text Solution

    |

  6. The truth table given below represents

    Text Solution

    |

  7. If alpha and beta current gains in common-base and common-emitter conf...

    Text Solution

    |

  8. The following circuit represents:

    Text Solution

    |

  9. In P-type semiconductor the majority and minorty charge carriers are r...

    Text Solution

    |

  10. In forward bias, the width of potential barrier in a P-N junction diod...

    Text Solution

    |

  11. Depletion layer consists of

    Text Solution

    |

  12. In junction diode, the holes are due to

    Text Solution

    |

  13. Which of the following when added as an impurity into silicon produces...

    Text Solution

    |

  14. Which one of the following gates will have an output of 1 ?

    Text Solution

    |

  15. The transfer ration of a transistor is 50. The input resistance of th...

    Text Solution

    |

  16. A semiconducting device is connected in a series circuit with a batter...

    Text Solution

    |

  17. The cause of the potential barrier in a p-n diode is:

    Text Solution

    |

  18. The following truth table belongs to which of the following four gates...

    Text Solution

    |

  19. The relation between alpha and beta parameters of current gains for a ...

    Text Solution

    |

  20. The diode used in the circuit shown in the figure has a constant volta...

    Text Solution

    |