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NEET PREVIOUS YEAR (YEARWISE + CHAPTERWISE)-SOLID AND SEMICONDUCTOR DEVICES-Exercise
- The following circuit represents:
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- In P-type semiconductor the majority and minorty charge carriers are r...
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- In forward bias, the width of potential barrier in a P-N junction diod...
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- Depletion layer consists of
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- In junction diode, the holes are due to
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- Which of the following when added as an impurity into silicon produces...
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- Which one of the following gates will have an output of 1 ?
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- The transfer ration of a transistor is 50. The input resistance of th...
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- A semiconducting device is connected in a series circuit with a batter...
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- The cause of the potential barrier in a p-n diode is:
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- The following truth table belongs to which of the following four gates...
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- The relation between alpha and beta parameters of current gains for a ...
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- The diode used in the circuit shown in the figure has a constant volta...
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- To obtain a P-type germanium semiconductor, it must be dopped with
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- When arsenic is added as an impurity to silicon, the resulting materia...
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- The current gain for a transistor working as a common-base amplifier i...
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- When N-P-N transistor is used as an amplifier-
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- Which of the following , when added as an impurity, into the silicon, ...
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- Which of the following gates corresponds to the truth table given belo...
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- In the figure, the input is across the terminals A and C and the o...
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