Home
Class 12
PHYSICS
The cause of the potential barrier in a ...

The cause of the potential barrier in a p-n diode is:

A

depletion of positive charges near the junction

B

concentration of positive charges near the junction

C

depletion of negative charges near the junction

D

concentration of positive and negative charges near the junction

Text Solution

Verified by Experts

The correct Answer is:
D
Promotional Banner

Topper's Solved these Questions

  • ROTATIONAL MOTION

    NEET PREVIOUS YEAR (YEARWISE + CHAPTERWISE)|Exercise Exercise|74 Videos

  • THERMAL AND CHEMICAL EFFECTS OF CURRENt

    NEET PREVIOUS YEAR (YEARWISE + CHAPTERWISE)|Exercise Exercise|34 Videos

Similar Questions

Explore conceptually related problems

The height of potential barrier in p-n junction diode is.............to temperature in kelvin.

In forward bias, the width of potential barrier in a P-N junction diode

In a forward biased PN - junction diode, the potential barrier in the depletion region is of the from...

A P-N junction diode connected to a battery of e.m.f. 4.5 V and an external resistance of 1000 Omega . What is the value of current in the circuit, if potential barrier in the diode = 0.5 V

In a forward biased p-n junction diode, the potential barrier in the depletion region will be of the form

Consider the following statements A and B and identify the correct answer. (A)A zener diode should be connected in reverse bias for proper functioning (B) The potential barrier of a p-n junction lies between 2 V and 5 V

In Fig . V_(0) is the potential barrier across a p-n junction, when no battery is connected across the junction

NEET PREVIOUS YEAR (YEARWISE + CHAPTERWISE)-SOLID AND SEMICONDUCTOR DEVICES-Exercise
  1. The transfer ration of a transistor is 50. The input resistance of th...

    Text Solution

    |

  2. A semiconducting device is connected in a series circuit with a batter...

    Text Solution

    |

  3. The cause of the potential barrier in a p-n diode is:

    Text Solution

    |

  4. The following truth table belongs to which of the following four gates...

    Text Solution

    |

  5. The relation between alpha and beta parameters of current gains for a ...

    Text Solution

    |

  6. The diode used in the circuit shown in the figure has a constant volta...

    Text Solution

    |

  7. To obtain a P-type germanium semiconductor, it must be dopped with

    Text Solution

    |

  8. When arsenic is added as an impurity to silicon, the resulting materia...

    Text Solution

    |

  9. The current gain for a transistor working as a common-base amplifier i...

    Text Solution

    |

  10. When N-P-N transistor is used as an amplifier-

    Text Solution

    |

  11. Which of the following , when added as an impurity, into the silicon, ...

    Text Solution

    |

  12. Which of the following gates corresponds to the truth table given belo...

    Text Solution

    |

  13. In the figure, the input is across the terminals A and C and the o...

    Text Solution

    |

  14. An oscillator is nothing but an amplifier with

    Text Solution

    |

  15. When a p-n junction diode is reverse biased the flow of current across...

    Text Solution

    |

  16. The part of a transistor which is most heavily doped to produce large ...

    Text Solution

    |

  17. A piece of copper and the other of germanium are cooled from the room ...

    Text Solution

    |

  18. Diamond is very hard, because

    Text Solution

    |

  19. For an electronic valve, the plate current I and plate voltage V in th...

    Text Solution

    |

  20. Which one of the following is the weakest kind of the bonding in solid...

    Text Solution

    |