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A piece of pure semiconductor of silicn ...

A piece of pure semiconductor of silicn of size `1cm xx 1 cm xx 1 mm` is having `5 xx 10^(28)` number of atoms per cubic metre. It is doped simultaneously with `5 xx 10^(22)` atoms per `m^(3)` of aresenic adn `5 xx 10^(20)` per `m^(3)` atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is `1.5 xx 10^(16) m^(-3)`. Mobility of electron is `3800 cm^(2) V^(-)S^(-1)`
Ratio of conductivity of doped silicon and pure silicon semiconductor is

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A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The conductivity of doped semiconductor (in Sm^(-1)) is

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The number of holes in this semiconductor are

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The number of electrons in this semiconductor are

The number of silicon atoms per m^(3) is 5 xx 10^(28) . This is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of Arsenic and 5 xx 10^(20) per m^(3) atoms of Indium. Calculate the number of electrons and holes given that n_(i) = 1.5 xx 10^(16) m^(-3) . Is the material n-type or p-type?

The number of silicon atoms per m^(3) is 5 xx 10^(28) . This is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of Arsenic and 5 xx 10^(20) per m^(3) atoms of Indium. Calcualte the number of electrons and holes. Given that n_(i) = 1.5 xx 10^(16) m^(-3) . Is the material n-type or p-type?