P-type semiconductor is formed when
(A). As impurity is mxied in Si
(B). Al impurity is mixed in Si
(C). B impurity is mixed in Ge
(D). P impurity is mixed in Ge.

A P -type semiconductor is formed when (A) . As impurity is mixed in Si (B) . Al impurity is mixed in Si (C) . B impurity is mixed in Ge (D) . P impurity is mixed in Ge

p-type semiconductor is formed when …….. (A) As impurity is mixed in Si. (B) Al impurity is mixed in Si. (C ) B impurity is mixed in Ge. (D) P impurity is mixed in Ge.

P -type semiconductors are made by adding impurity element

n type semiconductor is formed when trace amoutn of impurity is added to silicon. The numbe of elecrtons in the impurity atom must be

n-type semiconductor is formed when trace amount of impurity is added to silicon. The number of electrons in the impurity atom must be

A P-type semiconductor can be formed by doping Si or Ge with