In an intrinsic semiconductor, the fermi energy level is

Consider the following statement A and B and identify the correct choice of the given answer. A. The width of the depletion layer in a p-n junction diode increases in forward bias. B. In a intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden energy gap.

In intrinsic semiconductor

Intrinsic Semiconductors

In an n-type semiconductor, the fermi energy level lies