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Pure Si at 300 K has equal electron (n(e...

Pure Si at 300 K has equal electron `(n_(e))` and hole `(n_(h))` concentrations of `1.5xx10^(16)m^(-3)` doping by indium increases `n_(h)` to `4.5xx10^(22)m^(-3)`. Caculate `n_(e)` in the doped Si-

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Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentrastions of 1.5xx10^(16)m^(-3) doping by indium increases n_(h) to 4.5xx10^(22)m^(-3) . Caculate n_(theta) in the doped Si-

Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentration of 1.5xx10^(16) m^(-3) . Doping by indium increases n_(h) to 4.5xx10^(22)m^(-3) . Calculate n_(e) in the doped silicon.

Pure Si at 300K has equal electron (n_(e)) and hole (n_(h)) concentrations of 1.5xx10^(16)m^(-3) Doping by indium increases n_(h) to 3xx10^(22)m^(-3) . Calculate n_(e) in the doped Si.

Pure Si at 300K has equal electron (n_(e)) and hole (n_(h)) concentrations of 1.5xx10^(16)m^(-3) Doping by indium increases n_(h) to 3xx10^(22)m . Calculate n_(e_(2)) in the doped Si.

Pure Si at 300 K has equal electron (n_e) and hole (n_(h)) concentration of 2.xx10^(16) per m^(3) . Doping by indium increases n_(h) to 4xx10^(22) per m^(3) . Calculate n_(e) in the doped silicon.

Pure Si at 300 K has equal electron (n_e) and hole (n_(h)) concentration of 2.xx10^(16) per m^(3) . Doping by indium increases n_(h) to 4xx10^(22) per m^(3) . Calculate n_(e) in the doped silicon.

Pure Si at 300 K has equal electron (n_e) and hole (n_(h)) concentration of 2.xx10^(16) per m^(3) . Doping by indium increases n_(h) to 2xx10^(22) per m^(3) . Calculate n_(e) in the doped silicon.