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The concertration of hole-electron pairs...

The concertration of hole-electron pairs in pire silicon at `T=300K` is `7xx10^(15` per cubic metre. Antimoy is doped into silicon in a proportion of `1` arom in `10^(7)` atoms. Assuming that half of the inpurity atoms contribute electrons in the conduction band, calculate the factor electrons in the conduction band, calculate the factor by which the number of charge carriers increase due to doping. the number of silicon atoms per cubic meter is `5xx10^(28)`.

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The concentration of hole-electron pairs in pure silicon at T=300K is 7xx10^(15) per cubic metre, Antimony is doped into silicon in a proportion of 1 atom in 10^7 atons. Assuming that half of the impurity atons contribute electrons in the conduction band, calculate the foctor by which the number of silicon atoms per cubic metre is 5xx10^(28)

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