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The equation of the working part of the ...

The equation of the working part of the characteristic of a diode can be written as `I = 0.75 xx 10^(-3) V -2 xx10^(-3)A`. Calculate the load current, voltage and power dissipated at the plate when a load of resistance `1000 Omega and 100 V` from a source are applied.

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NN GHOSH-DIODE, TRIODE & TRANSISTER-Exercises
  1. The equation of the working part of the characteristic of a diode can ...

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  2. A diode has Child's constant K =0.2 (current in mA and voltage in volt...

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  3. In a certain triode, the output is 5 mA with an anode potential of 200...

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  4. A triode valve of anode slope resistance 20 kOmega is used with an ano...

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  5. The voltage of a triode amplifier with a resistive load of 5 kOmega is...

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  6. The plate resistance of a triode is 7.7 kOmega, and the transconductan...

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  7. Determine the conductivity of pure germanium at 27^(@)C. The concentra...

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  8. In a p-n junction diode the reverse saturation current is 10 muA. What...

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  9. Assume that the silicon diode in the given circuit requires a minimum ...

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  10. The base current of a transistor is 105 muA and the collector current ...

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  11. In a silicon transistor, a change of 7.89 mA in the emitter current p...

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  12. In a silicon transistor the base current is changed by 20 mu A. This r...

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  13. In triode valve, for a grid voltage V(g) = -1.2 V, the plate current I...

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  14. In the accompanying circuit (Fig. 5.9) the value of beta is 100. Find ...

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  15. In the accompanying circuit Fig. 5.10, if it is assumed that when that...

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  16. In the given circuit Fig. 5.11, the base current is 10 muA and the col...

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  17. In the given circuit (Fig. 5.12) calculate the value of the collector ...

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  18. Calculate the emiter current and collector voltage of the circuit give...

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  19. A transistor connected in common emitter configuration has V(C C)=8V, ...

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  20. In a transistor collector load is 4 kOmega whereas the zero signal cur...

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