" Silicon doped with electron-rich impurity forms "

which of the following statements are true about semiconductor ? (a)silicon doped with electron rich impurity is a p-type semiconductor (b)Silicon doped with an electrons rich impurity is an n-type semiconductor (c)Delocalised electrons increase the conductivity of doped silicon (d)An electron vacancy increase the conductivity of n- type semiconductor

Silicon doped with gallium forms

To make p type semiconductor pure silicon should be doped with the impurity atoms of

A sample of pure silicon is doped with a trivalent impurity whose each atom creates a hole the concentration holes in pure silicon is 7xx10^(15) holes per cubic metre and density of silicon is 5xx10^(23) a pure silicon sample by a factor of 120 calculate approximately the proportion in which the impurity is added

A p-type semiconductor is (i) a silicon crystal doped with arsenic impurity (ii) a silicon crystal doped with aluminium impurity (iii) a germanium crystal doped with boron impurity (iv) a germanium crystal doped with phosphorus impurities.

A p -type semiconductor is (i) A silicon crystal doped with arsenic impurity (ii) A silicon crystal doped with aluminium impurity (iii) A germanium crystal doped with boron impurity (iv) A germanium crystal doped with phosphorus impurity.