Home
Class 11
CHEMISTRY
Graphite is a good conductor of electric...

Graphite is a good conductor of electricity due to the presence of :

A

ione pair of electrons

B

free valence electrons

C

cations

D

amions

Text Solution

Verified by Experts

The correct Answer is:
B
In graphite one carbon atom is attached to three other carbon atoms. One electron of carbon remains free. Due to this free valence electron graphite is an electrical conductor.
Promotional Banner

Topper's Solved these Questions

  • SOLID STATE

    NARAYNA|Exercise LEVEL-I(H.W)|28 Videos

  • SOLID STATE

    NARAYNA|Exercise LEVEL-II(H.W)|34 Videos

  • SOLID STATE

    NARAYNA|Exercise PREVIOUS MAINS QUE|10 Videos

  • S-BLOCK ELEMENTS

    NARAYNA|Exercise LEVEL-4|15 Videos

  • SOME BASIC CONCEPTS IN CHEMISTRY STOICHIOMETRY (PART-I)

    NARAYNA|Exercise All Questions|555 Videos

Similar Questions

Explore conceptually related problems

Graphite is a good conductor of eletricity due to the presence of …………….. .

Graphite is a bad conductor of electricity.

Why is graphite a good conductor of electricity?

NARAYNA-SOLID STATE-LEVEL-IV
  1. which of the following is a network solid?

    Text Solution

    |

  2. which of the following is not the characteristic of ionic solids?

    Text Solution

    |

  3. Graphite is a good conductor of electricity due to the presence of :

    Text Solution

    |

  4. which of the following oxides behaves as conductor or insulator ...

    Text Solution

    |

  5. which of the following oxides shows electrical properties like ...

    Text Solution

    |

  6. The lattice site in a pure crystal cannot be occupied by :

    Text Solution

    |

  7. Graphite cannot be classified as :

    Text Solution

    |

  8. Schottky defect is observed in crystals when ……………. .

    Text Solution

    |

  9. Schottky defect is observed in crystals when ……………. .

    Text Solution

    |

  10. which of the following is true about the change the charge acq...

    Text Solution

    |

  11. To get a n- type semiconductor from silicon , it should be doped...

    Text Solution

    |

  12. The total of tetrahedral voids in the face centred unit cell is ……...

    Text Solution

    |

  13. Which of the following point defects are shown by AgBr (s) crys...

    Text Solution

    |

  14. In which pair most efficient packing is present?

    Text Solution

    |

  15. The percentage of empty space in a body centred cubic arrangement is :

    Text Solution

    |

  16. which of the following statemets is not true about the hexagona...

    Text Solution

    |

  17. in which of the following structures coordination number for cati...

    Text Solution

    |

  18. What is the coordination number in a square close packed structures in...

    Text Solution

    |

  19. which kind of defects are introduced by doping ?

    Text Solution

    |

  20. silicon doped with electron rich impurity forms ………. .

    Text Solution

    |