Home
Class 12
PHYSICS
In a semiconducting material the mobilit...

In a semiconducting material the mobilities of electrons and holes are `mu_(e)` and `mu_(h)` respectively. Which of the following is true?

A

`my_e gt mu_h`

B

`mu_e lt mu_h`

C

`mu_e = mu_h`

D

`mu_e lt 0 , mu_h gt 0`

Text Solution

Verified by Experts

The correct Answer is:
A
Promotional Banner

Topper's Solved these Questions

  • SEMI CONDUCTOR AND LOGIC GATES

    MOTION|Exercise EXERCISE 2|33 Videos
  • SEMI CONDUCTOR AND LOGIC GATES

    MOTION|Exercise EXERCISE 3|34 Videos
  • ROTATIONAL MOTION

    MOTION|Exercise Exercise - 3 ( Section-B )|24 Videos
  • SIMPLE HARMONIC MOTION

    MOTION|Exercise EXERCISE -3 Section - B Previous Year Problems | JEE MAIN|23 Videos

Similar Questions

Explore conceptually related problems

Relative permittivity and permeability of a material are epsilon_(r) and mu_(r) respectively which of the following values of these quantities are allowed for a diamagnetic material ?

Relative permitivity and permeability of a material epsilon_(r) and mu_(r) , respectively . Which of the following values of these quantities are allowed for a diamagnetic material?

If refractive index of core & cladding are mu_(1) & mu_(2) respectively then :

The mobility of electrons when compared tot hat of holes is

A semiconductor having electron and linear mobilities mu_(n) and mu_(p) respectively. If its intrinsic carrier density is n_(i) , then what will be the value of hole concentration P for which the conductivity will be maximum at a given temperature?

A pure silicon crystal of length l(0.1m) and area A(10^(-4) m^(2)) has the mobility of electron (mu_(e)) and holes (mu_(h)) as 0.135 m^(2)//Vs and 0.48 m^(2)//Vs , respectively, If the voltage applied across it is 2V and the intrinsic charge concen-tration it is 2V and the intrinsic charge concen-tration is n_(i) = 1.5 xx 10^(6) m^(-3) , then the total current flowing through the crystal is.

MOTION-SEMI CONDUCTOR AND LOGIC GATES-EXERCISE 3
  1. In a semiconducting material the mobilities of electrons and holes are...

    Text Solution

    |

  2. If temperature increases, conductivity of semiconductor will be –

    Text Solution

    |

  3. At 0K, silicon behave as –

    Text Solution

    |

  4. The energy band gap is maximum in

    Text Solution

    |

  5. The part of a transistor which is most heavily doped to produce large ...

    Text Solution

    |

  6. In the middle of the depletion layer of a reverse - biased p - n junc...

    Text Solution

    |

  7. The difference in the variation of resistance with temperature in a me...

    Text Solution

    |

  8. A strip of copper and another of germanium are cooled from room tempe...

    Text Solution

    |

  9. When n-p-n transistor is used as an amplifier

    Text Solution

    |

  10. A piece of copper and another of germanium are cooled from room temper...

    Text Solution

    |

  11. The manifestation of band structure in solids is due to

    Text Solution

    |

  12. When p-n junction diode is forward biased then

    Text Solution

    |

  13. The electrical conductivity of a semiconductor increases when electrom...

    Text Solution

    |

  14. In a full wave rectifier circuit operating from 50 Hz mains frequency ...

    Text Solution

    |

  15. In a common-base amplifier, the phase difference between the input sig...

    Text Solution

    |

  16. If the ratio of the concentration of electron to that of holes in a se...

    Text Solution

    |

  17. A solid which is not transperent to visible light and whose conductivi...

    Text Solution

    |

  18. In a common base mode of transistor, collector current is 5.488 mA for...

    Text Solution

    |

  19. If the lattice constant of this semiconductor is decreased, then which...

    Text Solution

    |

  20. In the following, which one of the diodes is reverse biased ?

    Text Solution

    |

  21. The circuit has two oppositely connected ideal diodes in parallel. Wha...

    Text Solution

    |