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The electron mobility in N-type germaniu...

The electron mobility in `N`-type germanium is `3900cm^(2)//v-s` and its conductivity is `6.24 mho//cm`, then impurity concentration will be if the effect of cotters is negligible

A

`10^15 cm^3`

B

`10^13// cm^3`

C

`10^12 // cm^3`

D

`10^16 //cm^3`

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The correct Answer is:
D
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MOTION-SEMI CONDUCTOR AND LOGIC GATES-EXERCISE 3
  1. The electron mobility in N-type germanium is 3900cm^(2)//v-s and its c...

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  2. If temperature increases, conductivity of semiconductor will be –

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  3. At 0K, silicon behave as –

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  4. The energy band gap is maximum in

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  5. The part of a transistor which is most heavily doped to produce large ...

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  6. In the middle of the depletion layer of a reverse - biased p - n junc...

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  7. The difference in the variation of resistance with temperature in a me...

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  8. A strip of copper and another of germanium are cooled from room tempe...

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  9. When n-p-n transistor is used as an amplifier

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  10. A piece of copper and another of germanium are cooled from room temper...

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  11. The manifestation of band structure in solids is due to

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  12. When p-n junction diode is forward biased then

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  13. The electrical conductivity of a semiconductor increases when electrom...

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  14. In a full wave rectifier circuit operating from 50 Hz mains frequency ...

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  15. In a common-base amplifier, the phase difference between the input sig...

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  16. If the ratio of the concentration of electron to that of holes in a se...

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  17. A solid which is not transperent to visible light and whose conductivi...

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  18. In a common base mode of transistor, collector current is 5.488 mA for...

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  19. If the lattice constant of this semiconductor is decreased, then which...

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  20. In the following, which one of the diodes is reverse biased ?

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  21. The circuit has two oppositely connected ideal diodes in parallel. Wha...

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