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A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area `1cm^(2)` and thickness 0.5 mm. if the concentration of electrons in Ge is `2xx10^(19)//m^(3)` and mobilities of electrons and holes are 0.36 `(m^(2))/("volt-sec") and 0.14(m^(2))/("volt-sec")` respectivity, then the current flowing through the plate will be-

A

0.25 A

B

0.45 A

C

0.56 A

D

0.64 A

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The correct Answer is:
D
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MOTION-SEMI CONDUCTOR AND LOGIC GATES-EXERCISE 3
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  2. If temperature increases, conductivity of semiconductor will be –

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  3. At 0K, silicon behave as –

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  4. The energy band gap is maximum in

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  5. The part of a transistor which is most heavily doped to produce large ...

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  6. In the middle of the depletion layer of a reverse - biased p - n junc...

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  7. The difference in the variation of resistance with temperature in a me...

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  8. A strip of copper and another of germanium are cooled from room tempe...

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  9. When n-p-n transistor is used as an amplifier

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  10. A piece of copper and another of germanium are cooled from room temper...

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  11. The manifestation of band structure in solids is due to

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  12. When p-n junction diode is forward biased then

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  13. The electrical conductivity of a semiconductor increases when electrom...

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  14. In a full wave rectifier circuit operating from 50 Hz mains frequency ...

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  15. In a common-base amplifier, the phase difference between the input sig...

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  16. If the ratio of the concentration of electron to that of holes in a se...

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  17. A solid which is not transperent to visible light and whose conductivi...

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  18. In a common base mode of transistor, collector current is 5.488 mA for...

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  19. If the lattice constant of this semiconductor is decreased, then which...

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  20. In the following, which one of the diodes is reverse biased ?

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  21. The circuit has two oppositely connected ideal diodes in parallel. Wha...

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