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A potential barrier of 0.50 V exists acr...

A potential barrier of `0.50 V` exists across a `P-N` junction. If the depletion region is `5.0xx10^(-7)m`, wide the intensity of the electric field in this region is

A

`1.0 xx 10^6 V//m`

B

`1.0 xx 10^5 V//m`

C

`2.0 xx 10^5 V//m`

D

`2.0 xx 10^6 V//m`

Text Solution

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The correct Answer is:
A
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MOTION-SEMI CONDUCTOR AND LOGIC GATES-EXERCISE 3
  1. A potential barrier of 0.50 V exists across a P-N junction. If the de...

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  2. If temperature increases, conductivity of semiconductor will be –

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  3. At 0K, silicon behave as –

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  4. The energy band gap is maximum in

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  5. The part of a transistor which is most heavily doped to produce large ...

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  6. In the middle of the depletion layer of a reverse - biased p - n junc...

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  7. The difference in the variation of resistance with temperature in a me...

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  8. A strip of copper and another of germanium are cooled from room tempe...

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  9. When n-p-n transistor is used as an amplifier

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  10. A piece of copper and another of germanium are cooled from room temper...

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  11. The manifestation of band structure in solids is due to

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  12. When p-n junction diode is forward biased then

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  13. The electrical conductivity of a semiconductor increases when electrom...

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  14. In a full wave rectifier circuit operating from 50 Hz mains frequency ...

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  15. In a common-base amplifier, the phase difference between the input sig...

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  16. If the ratio of the concentration of electron to that of holes in a se...

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  17. A solid which is not transperent to visible light and whose conductivi...

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  18. In a common base mode of transistor, collector current is 5.488 mA for...

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  19. If the lattice constant of this semiconductor is decreased, then which...

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  20. In the following, which one of the diodes is reverse biased ?

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  21. The circuit has two oppositely connected ideal diodes in parallel. Wha...

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