Home
Class 12
PHYSICS
The part of a transistor which is most h...

The part of a transistor which is most heavily doped to produce large number of majority carriers is

A

Emitter

B

Base

C

Collector

D

Can be any of the above three

Text Solution

Verified by Experts

The correct Answer is:
A
Promotional Banner

Topper's Solved these Questions

  • SEMI CONDUCTOR AND LOGIC GATES

    MOTION|Exercise EXERCISE 2|33 Videos

  • ROTATIONAL MOTION

    MOTION|Exercise Exercise - 3 ( Section-B )|24 Videos

  • SIMPLE HARMONIC MOTION

    MOTION|Exercise EXERCISE -3 Section - B Previous Year Problems | JEE MAIN|23 Videos

Similar Questions

Explore conceptually related problems

The part of a transistor which is most heavily doped to product large number of majority carriers is

The part of a transistor which is heavily doped to produce a large number of majority carriers, is

The part of a transistor which is heavily doped to produced large number of majority carries is

The part of a transistor which is hevaily doped to produce a large number of majority carriers is

In a transistor the region which is heavily doped is

Which part of human brain is most developed?

In Drosophila single mating could produce large number of progeny flies.

MOTION-SEMI CONDUCTOR AND LOGIC GATES-EXERCISE 3
  1. At 0K, silicon behave as –

    Text Solution

    |

  2. The energy band gap is maximum in

    Text Solution

    |

  3. The part of a transistor which is most heavily doped to produce large ...

    Text Solution

    |

  4. In the middle of the depletion layer of a reverse - biased p - n junc...

    Text Solution

    |

  5. The difference in the variation of resistance with temperature in a me...

    Text Solution

    |

  6. A strip of copper and another of germanium are cooled from room tempe...

    Text Solution

    |

  7. When n-p-n transistor is used as an amplifier

    Text Solution

    |

  8. A piece of copper and another of germanium are cooled from room temper...

    Text Solution

    |

  9. The manifestation of band structure in solids is due to

    Text Solution

    |

  10. When p-n junction diode is forward biased then

    Text Solution

    |

  11. The electrical conductivity of a semiconductor increases when electrom...

    Text Solution

    |

  12. In a full wave rectifier circuit operating from 50 Hz mains frequency ...

    Text Solution

    |

  13. In a common-base amplifier, the phase difference between the input sig...

    Text Solution

    |

  14. If the ratio of the concentration of electron to that of holes in a se...

    Text Solution

    |

  15. A solid which is not transperent to visible light and whose conductivi...

    Text Solution

    |

  16. In a common base mode of transistor, collector current is 5.488 mA for...

    Text Solution

    |

  17. If the lattice constant of this semiconductor is decreased, then which...

    Text Solution

    |

  18. In the following, which one of the diodes is reverse biased ?

    Text Solution

    |

  19. The circuit has two oppositely connected ideal diodes in parallel. Wha...

    Text Solution

    |

  20. If an a p-njunction, a square input signal of 10V is applied, as shown...

    Text Solution

    |