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The difference in the variation of resis...

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

A

Variation of the number of charge carriers with temperature

B

Type of bonding

C

Variation of scattering mechanism with temperature

D

Crystal structure

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A
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MOTION-SEMI CONDUCTOR AND LOGIC GATES-EXERCISE 3
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  2. In the middle of the depletion layer of a reverse - biased p - n junc...

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  3. The difference in the variation of resistance with temperature in a me...

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  4. A strip of copper and another of germanium are cooled from room tempe...

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  5. When n-p-n transistor is used as an amplifier

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  6. A piece of copper and another of germanium are cooled from room temper...

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  7. The manifestation of band structure in solids is due to

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  8. When p-n junction diode is forward biased then

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  9. The electrical conductivity of a semiconductor increases when electrom...

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  10. In a full wave rectifier circuit operating from 50 Hz mains frequency ...

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  11. In a common-base amplifier, the phase difference between the input sig...

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  12. If the ratio of the concentration of electron to that of holes in a se...

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  13. A solid which is not transperent to visible light and whose conductivi...

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  14. In a common base mode of transistor, collector current is 5.488 mA for...

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  15. If the lattice constant of this semiconductor is decreased, then which...

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  16. In the following, which one of the diodes is reverse biased ?

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  17. The circuit has two oppositely connected ideal diodes in parallel. Wha...

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  18. If an a p-njunction, a square input signal of 10V is applied, as shown...

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  19. Carbon , silicon and germanium have four valence electrons each . At r...

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  20. A working transitor with its three legs marked P, Q and R is tested us...

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