Home
Class 12
PHYSICS
Suppose a pure Si-crystal has 5xx10^(28)...

Suppose a pure Si-crystal has `5xx10^(28) "atoms" m^(-3)`. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Give that `n_(i)=1.5xx10^(16)m^(-3)`.

Text Solution

Verified by Experts

Note that thermally generated electrons `(n_(i) ~10^(16) m^(–3))` are negligibly small as compared to those produced by doping.
Therefore, `n_(e)approxN_(D)`.
Since `n_(e)n_(h) = n_(i)^(2)`, The number of holes
`n_(h) = (2.25 × 10^(32))//(5 ×10^(22))
~ 4.5 × 10^(9) m^(–3)`
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS MATERIALS DEVICES AND SIMPLE CIRCUITS

    NCERT|Exercise Exercise|15 Videos

  • RAY OPTICS AND OPTICAL INSTRUMENTS

    NCERT|Exercise Exercise|32 Videos

  • WAVE OPTICS

    NCERT|Exercise Exercise|21 Videos

Similar Questions

Explore conceptually related problems

Suppose a pure Si crystal has 6xx10^(28) atoms m^(-3) . It is doped by 1ppm concentration of pentavalent As. Calculate the number of electrons and holes, Given that n_(i)=0.5xx10^(16)m^(-3)

Pure Si crystal at 300 k has 2.5 xx10^(28) atoms m^(-3) it is doped by 1 ppm concentration of pentavalent element As calculate the new concentration of electrons and holes take n_(i) =1.5 xx10^(16) m^(-3)

The number of silicon atoms per m^(3) is 5xx10^(28) . This is doped simultaneously with 5xx10^(22) atoms per m^(3) of Arsenic and 5xx10^(20) per m^(3) atoms of indium. Calculate the number of electrons and holes. Given that n_(i)=1.5xx10^(16)m^(-3) . Is the material n-type or p-type?

Suppose a 'n'- type wafer is created by doping Si crystal having 5xx10^(28) "atoms"//m^(3) with 1 ppm concentration of As. On the surfabe 200 ppm Boron is added to create 'p' region in this wafer. Considering n_(i)=1.5xx10^(16)m^(-3) , (i) Calculate the densities of the charge carriers in the n & p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.

Calculate the gyro magnetic ratio of electron (given 1.6 xx10^(-19) C, m_r=9.1xx10^(-3) kg )

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) Ratio of conductivity of doped silicon and pure silicon semiconductor is

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The conductivity of doped semiconductor (in Sm^(-1)) is

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The number of holes in this semiconductor are

NCERT-SEMICONDUCTOR ELECTRONICS MATERIALS DEVICES AND SIMPLE CIRCUITS-Exercise
  1. Suppose a pure Si-crystal has 5xx10^(28) "atoms" m^(-3). It is doped b...

    Text Solution

    |

  2. In a n-type semiconductor, which of the following statement is true?

    Text Solution

    |

  3. Which of the statements given in above example is true for p - type se...

    Text Solution

    |

  4. Carbon , silicon and germanium have four valence elcectrons each . The...

    Text Solution

    |

  5. In an unbiased p-n junction electrons diffuse from n-region to p-regio...

    Text Solution

    |

  6. When a forward bias is applied to a p -n junction. It

    Text Solution

    |

  7. In half - wave rectification, what is the output frequency, if the ...

    Text Solution

    |

  8. A p-n photodiode is fabricated from a semiconductor with band - gap of...

    Text Solution

    |

  9. The number of silicon atoms per m^(3) is 5xx10^(28). This is doped sim...

    Text Solution

    |

  10. In an intrinsic semiconductor the energy gap E(g) is 1.2 eV. Its hole ...

    Text Solution

    |

  11. In a p-n junction diode, the current I can expressed as I=I(0) exp((eV...

    Text Solution

    |

  12. You are given the two circuits as shown in Fig. and . Show that circui...

    Text Solution

    |

  13. Write the truth table for a NAND gate as given in Fig.9. Hence identif...

    Text Solution

    |

  14. You are given two circuits as shown in following figure. The logic ope...

    Text Solution

    |

  15. Write the truth table for circuit given in Fig. below consisting of NO...

    Text Solution

    |

  16. Write the truth table for the circuit given in Fig., consisting of NOR...

    Text Solution

    |