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An electric field us applied to a semico...

An electric field us applied to a semiconductor.Let the number of charge carriers be n and the average drift speed be v.If the temperature is increased,

A

both n and v will increase

B

n will increase but v will decrease

C

v will increase but n will decrease

D

both n and v will decrease

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The correct Answer is:
B
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MOTION-ELECTRONICS - SEMI CONDUCTOR-EXERCISE - 1
  1. Which of the following energy band diagrams shows the N-type semicondu...

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  2. Electric conduction in a semiconductor takes place due to

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  3. An electric field us applied to a semiconductor.Let the number of char...

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  4. Lets npand ne be the number of holes and conduction electrons in an ex...

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  5. A p-type semiconductor is

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  6. When on impurity is doped into an intrinsic semiconductor, the conduct...

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  7. The intrinsic semiconductor becomes an insulator at

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  8. What will be conductivity of pure sillicon crystal at 300 K temp? if e...

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  9. In sample of pure silicon 10^(13) "atom"//cm^(3) is mixed of phosphoru...

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  10. Mobility of electron in N-type Ge is 5000 cm^(2)//"volt" sec and condu...

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  11. Forbidden energy gap of Ge is 0.75eV, maximum wave length of incident ...

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  12. Which value of potential barrier is in the range, for given PN junctio...

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  13. In a p- n junction diode not connected to any circuit,

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  14. If the two ends of a p-n junction are joined by a wire ,

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  15. The minority current in a p-n junction is :–

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  16. The majority current in a p-n junction is :–

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  17. Diffusion current in a p-n junction is greater than the drift current ...

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  18. A hole diffuses from the p-side to the n-side in a p-n junction.This m...

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  19. For the given circuit shown in fig, to act as full wave rectifier :– a...

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  20. In a ............... biased P-N Jn., the net flow holes is from N-regi...

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