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What will be conductivity of pure sillic...

What will be conductivity of pure sillicon crystal at 300 K temp? if electron hole pairs per `cm^(3)` is `1.072xx10^(10)` at this temp. `mu_(n)=1350 cm^(2)//"volt"` sec and `mu_(p)=480 cm^(2)//"volt"` sec-

A

`3.14 times 10^(-6) mho//cm`

B

`3 times 10^(6) mho//cm`

C

`10^(-6)mho//cm`

D

`10^(6)mho//cm`

Text Solution

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The correct Answer is:
A
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MOTION-ELECTRONICS - SEMI CONDUCTOR-EXERCISE - 1
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  2. The intrinsic semiconductor becomes an insulator at

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  3. What will be conductivity of pure sillicon crystal at 300 K temp? if e...

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  4. In sample of pure silicon 10^(13) "atom"//cm^(3) is mixed of phosphoru...

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  5. Mobility of electron in N-type Ge is 5000 cm^(2)//"volt" sec and condu...

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  6. Forbidden energy gap of Ge is 0.75eV, maximum wave length of incident ...

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  7. Which value of potential barrier is in the range, for given PN junctio...

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  8. In a p- n junction diode not connected to any circuit,

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  9. If the two ends of a p-n junction are joined by a wire ,

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  10. The minority current in a p-n junction is :–

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  11. The majority current in a p-n junction is :–

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  12. Diffusion current in a p-n junction is greater than the drift current ...

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  13. A hole diffuses from the p-side to the n-side in a p-n junction.This m...

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  14. For the given circuit shown in fig, to act as full wave rectifier :– a...

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  15. In a ............... biased P-N Jn., the net flow holes is from N-regi...

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  16. Two indentical P-N Jn. may be connected in series with a battery in th...

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  17. Region which have no free electron and holes in P-N junction is

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  18. A two volt battery forward biased and a diode. However, there is a dro...

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  19. Which of the following diode is reverse biased

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  20. A transistor is used in the common emitter mode as an amplifier then :...

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