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Mobility of electron in N-type Ge is 500...

Mobility of electron in N-type Ge is `5000 cm^(2)//"volt"` sec and conductivity `5 "mho/cm"`. If effect of holes is negligible then impurity concentration will be

A

`6.25 times 10^(15)//cm^(3)`

B

`9.25 times 10^(14)//cm^(3)`

C

`6 times 10^(13)//cm^(3)`

D

`9 times 10^(13)//cm^(3)`

Text Solution

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The correct Answer is:
A
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MOTION-ELECTRONICS - SEMI CONDUCTOR-EXERCISE - 1
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  15. Region which have no free electron and holes in P-N junction is

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