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A hole diffuses from the p-side to the n...

A hole diffuses from the p-side to the n-side in a p-n junction.This means that

A

a bond is broken on the n-side and the electron freed from the bond jumps to the conduction band

B

a conduction electron on the p-side jumps to a broken bond to complete it.

C

a bond is broken on the n-side and the electron free from the bond jumps to a broken bond on the p-side to complete it

D

a bond is broken on the p-side and the electron free from the bond jumps to a broken bond on the n-side to complete it

Text Solution

Verified by Experts

The correct Answer is:
C
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MOTION-ELECTRONICS - SEMI CONDUCTOR-EXERCISE - 1
  1. The majority current in a p-n junction is :–

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  2. Diffusion current in a p-n junction is greater than the drift current ...

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  3. A hole diffuses from the p-side to the n-side in a p-n junction.This m...

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  4. For the given circuit shown in fig, to act as full wave rectifier :– a...

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  5. In a ............... biased P-N Jn., the net flow holes is from N-regi...

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  6. Two indentical P-N Jn. may be connected in series with a battery in th...

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  7. Region which have no free electron and holes in P-N junction is

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  8. A two volt battery forward biased and a diode. However, there is a dro...

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  9. Which of the following diode is reverse biased

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  10. A transistor is used in the common emitter mode as an amplifier then :...

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  11. In a transistor,

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  12. In an n-p-n transistor circuit, the collector current is 20 mA. If 90 ...

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  13. What is the value of output voltage V0 in the circuit shown in the fig...

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  14. What is the power gain in a CE amplifier, where input resistance is 3k...

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  15. When N-P-N transistor is used as an amplifier-

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  16. An oscillator is nothing but an amplifier with

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  17. In which of the configuration of a transistor , the power gain is high...

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  18. In a common emitter transistor circuit, the base current is 40 muA, th...

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  19. In a transistor the base is very lightly doped as compared to the emit...

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  20. A transsitor is operated in CE configuration at V(CC) = 2 V such that ...

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