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Carbon, silicon and germanium atoms have...

Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by `(E_(g))_(C),(E_(g))_(Si)` and `(E_(g))_(Ge)`, respectively. Which one of the following relationship is true in their case?

A

`(E_(g))_(C) lt (E_(g))_(Ge)`

B

`(E_(g))_(C) gt (E_(g))_(Si)`

C

`(E_(g))_(C)=(E_(g))_(Si)`

D

`(E_(g))_(C) lt (E_(g))_(Si)`

Text Solution

Verified by Experts

The correct Answer is:
B
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MOTION-ELECTRONICS - SEMI CONDUCTOR-EXERCISE - 2
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  2. Choose the only false statement from the following

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  3. Carbon, silicon and germanium atoms have four valence electrons each. ...

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  4. Consider an n-p-n transistor amplifer in common-emitter configuration....

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  5. In a semiconducting material the mobilities of electrons and holes are...

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  6. A transistor -oscillator using a resonant circuit with an inductor L (...

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  7. A forward biased diode is

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  8. A photocell employs photoelectric effect to convert

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  9. A transistor is operated in common emitter configuration at constant c...

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  10. In the energy band diagram of a material shown below, the open circles...

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  11. A common emitter amplifier has a voltage gain of 50, an input impedanc...

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  12. If P-N junction is reverse biased then width of depletion layer :-

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  13. Fermi level of n-type semi-conductor lies in:-

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  14. What is the energy gap in Si semiconductor?

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  15. When P is dopped with Si, the resultant semi-conductor will be :-

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  16. A p-n photodiode is made of a material with a band gap of 2.0 eV. The ...

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  17. The voltage gain of an amplifier with 9% negative feedback is 10. The ...

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  18. A p-n photodiode is fabricated from a semiconductor with a band gap of...

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  19. A transistor is operated in common emitter configuration at V(c)=2 V s...

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  20. The device that can act as a complete electronic circuit is

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