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The part of a transistor which is most h...

The part of a transistor which is most heavily doped to produce large number of majority carriers is

A

Emitter

B

Base

C

Collector

D

Can be any of the above three

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The correct Answer is:
A
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MOTION-ELECTRONICS - SEMI CONDUCTOR-EXERCISE - 3
  1. At 0K, silicon behave as –

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  2. The energy band gap is maximum in –

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  3. The part of a transistor which is most heavily doped to produce large ...

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  4. In the middle of the depletion layer of a reverse - biased p - n junc...

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  5. The difference in the variation of resistance with temperature in a me...

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  6. A strip of copper and another of germanium are cooled from room tempe...

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  7. When npn transistor is used as an amplifler

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  8. A piece of copper and another of germanium are cooled from room temper...

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  9. The manifestation of band structure in solids is due to

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  10. When p-n junction diode is forward biased then

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  11. The electrical conductivity of a semiconductor increases when electrom...

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  12. In a full wave rectifier circuit operating from 50 Hz mains frequency ...

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  13. In a common-base amplifier, the phase difference between the input sig...

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  14. If the ratio of the concentration of electron to that of holes in a se...

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  15. A solid which is not transperent to visible light and whose conductivi...

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  16. In a common base mode of transistor, collector current is 5.488 mA for...

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  17. If the lattice constant of this semiconductor is decreased, then which...

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  18. In the following, which one of the diodes is reverse biased –

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  19. The circuit has two oppositely connected ideal diodes in parallel. Wha...

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  20. If a p-n junction diode, a square input signal of 10 V is applied as s...

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