A crystal of intrinsic silicon at room temperature has a carrier concentration of `1.6xx10^(16)m^(-3)` . If the donor concentration level is `4.8xx10^(20) m^(-3)` , then the concentration of holes in the semiconductor is

A semiconductor has equal electron and hole concentration of 2xx10^(8)m^(-3) . On doping with a certain impurity, the electron concentration increases to 4xx10^(10)m^(-3), then the new hole concentration of the semiconductor is

A semiconductor crystal has equal electron and hole concentration of 9xx10^(8) m^(-3) it is doped by indium so that the hole concentration increases to 4.5 xx10^(12) m^(-3) calculate the new concentration of free electrons in the doped crystal nad also mention its type

A semiconductor is known to have an electron concentration of 5 xx 10^(13)//cm^(3) and hole concentration of 8 xx 10^(12)//cm^(3) . The semiconductor is

A semiconductor has an intrinsic carrier concentration of 1.41 xx 10^(16) m^-3 . When doped with 10^(21) m^-3 phosphorus, the concentration of holes at room temperature is n xx 10^(11) / m^3 . Find n .

A semiconductor has equal electron and hole concentration of 6xx 10^(4)m^(-3) . On doping with a certain impurity, electron concentration increases to 8 xx 10^(12)m^(-3) . Identify the type of semiconductor.

A semiconductor is known to have an electron concentric of 8xx10^(13)//cm^(3) and hole concentration of 5xx10^(12)//cm^(3) . The semiconductor is