In a `p-n` junction diode the thickness of deplection layer is `2 xx 10^(-6) m` and barrier potential is `0.3 V`. The intensity of the electrical field at the junction is.

In a p-n junction diode made with Ge, the thickness of depletion layer is 2xx10^(-6) m and barrier potential is 0.3V. Find the strength of the electric field at the junction.

In an unbiased p-n junction diode the thickness of the deplection layer is 7xx10^(-6) m and the potential barrier is 0.7 V . The electric field in this region is

In a p-n junction, the thickness of the depletion layer is 10^(-6) m. If the potential difference across it is 0.2 V, then the electric field set up across the junction is

In a p-n junction, the thickness of depletion region is 2xx10^(-7)m and potential barrier across the junction is 0.20 V What will be the intensity of electric field in this region ?

In a p-n junction, the thickness of depletion region is 2xx10^(-7)m and potential barrier across the junction is 0.20 V (a) What will be the intensity of electric field in this region ? (b) if an electron, from n-side approaches the p-n junction with speed 5xx10^(5) m//s . then with what speed it will enter the p-side ?

The direction of the electric field in p-n junction diode is …….