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["The width of forbidden gap in silicon"...

["The width of forbidden gap in silicon"],["crystal is "1.1eV" .When the crystal is"],["converted in to a "N"-type semiconductor"],["the distance of Fermilevel from"],["conduction band is"]

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The width of forbidden gap in silicon crystal is 1.1 eV . When the crystal is converted into a N -type semiconductor the distance of Fermi level from conduction band is

The width of forbidden gap in silicon crystal is 1.2 ev . When the crystal is converted into a n-type semiconductor the distance of fermi level from conduction band is Greater than 0.55 eV

The width of forbidden gap for germanium crystal at 0 K is

The valence of an impurity added to germanium crystal in order to convert it into a P -type semiconductor is