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If resistivity of pure silicon is 3000 O...

If resistivity of pure silicon is `3000 Omega m` and the electron and hole mobilities are  `0.12m^(2)v^(-1)s^(-1)`and `0.045 m^(2)v^(-1)s^(-1)` respectively, determine. The resistivity of a specimen of the material when `10^(19)` atoms of phosphorous are added `per m^(3)` Given  `e=1.6 xx10^(-19) c, rho =3000Omega, u_(e)=0.12m^(2)v^(-1)s^(-1), u_(h)=0.045m^(2)v^(-1)s^(-1)`

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To solve the problem, we need to determine the resistivity of a specimen of silicon after adding a certain number of phosphorus atoms. Here’s a step-by-step breakdown of the solution: ### Step 1: Understand the Given Data - Resistivity of pure silicon, \( \rho = 3000 \, \Omega \cdot m \) - Electron mobility, \( \mu_e = 0.12 \, m^2/V \cdot s \) - Hole mobility, \( \mu_h = 0.045 \, m^2/V \cdot s \) - Number of phosphorus atoms added, \( N_d = 10^{19} \, atoms/m^3 \) - Charge of an electron, \( e = 1.6 \times 10^{-19} \, C \) ...
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If resistivity of pure silicon is 3000Omegam , and the electron and hole mobilities are 0.12 m^(2)V^(-1)s^(-1) and 0.045m^(2)V^(-1)s^(-1) respectively, determine the resistivity of a specimen of the material when 10^(19) atoms of phosphorous are added per m^(3) are also added. Given charge on electron =1.6xx10^(-19)C .

A type semiconductor sample has electron and hole concentration of 1.6 xx 10^(19) the electron and hole mobility in the sample is 1.2 m^(2) v^(-1) s^(-1) and 0.001 m^(2)v^(-1) s^(-1) respectively calculate the value of resistivity of the sample

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Mobilities of electorns and holes in a sample of intrinsic germanium at room temperature are 0.54m^(2)V^(-1)s^(-1) and 0.18m^(2)V^(-1)s^(-1) respectively. If the electron and hole densities are equal to 3.6xx10^(19)m^(-3) calculate the germanium conductivity.

What is the conductivity of a semiconductor (in Omega^(-1) m^(-1) ) if electron density = 5 xx 10^(12) cm^(-3) and hole density = 8 xx 10^(13) cm^(-3) ? (mu_(e) = 2.3 V^(-1) s^(-1)m^(2), mu_(h) = 0.01 m^(2) V^(-1) s^(-1))

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A battery of emf 2V is connected across a block of length 0.1m and area of cros-section 1xx10^(-4)m^(2) . If the block is of intrinsic silocon at 300K , find the electron and hole currents. What will be the magnitude of the total current? What will be the magnitude of the total current if germanium is used instead of silicon? Given that for Si at 300K : mu_(e)=0.135m^(2)V^(-1)s^(-1),mu_(h)=0.048m^(2)V^(-1)s^(-1) and intristic carrier concentration n_(i)=1.5xx10^(16)m^(-3) . For Ge at 300K: mu_(e)=0.39m^(2)V^(-1)s^(-1),mu_(h)=0.19m^(2)V^(-1)s^(-1) and n_(i)=2.4xx10^(19)m^(-3)

FIITJEE-SEMICONDUCTOR AND DEVICE-SOLVED PROBLEMS Objective: Level-I
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  4. An 'antenna' is:

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  5. The characteristic impedance of a coaxial cable is of the order of

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  6. Long distance short-wave radio broadcasting uses

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  7. Propogation constant of a transmission line is :

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  9. The number of telephone conversations by a fibre of band width 40MHz, ...

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  10. Distance of propogation from antenna of height 20m is

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  11. If critical frquency for ionosphere is 30MHz.Calculate the maximum fre...

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  12. The velocity of electromagnetic waves in a dieclectric medium (epsilo...

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  13. For television broadcasting, the frequency employed is normally.

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  14. An antenna is :

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  15. The characteristic impedance of a co-axial cableis of the order of:

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  16. Long distance short - wave radio frequency broadcasting uses:

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  17. Propogation constant of a transmission line is :

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  18. The T.V.Transmission tower in Delhi has a height of 240m. The distnace...

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  19. The number of telephone conversations by a fibre of band width 40MHz, ...

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  20. Distance of propogation from antenna of height 20m is

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  21. If critical frquency for ionosphere is 30MHz.Calculate the maximum fre...

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