If `V_(1) gt V_(2), r` is resistance offered by diode in forward bias then current through the diode is.
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The resistance of P-N-junction diode in forward bias is

Assume that each diode shown has a forward bias resistance of 50Omega and an infinite reverse bias resistance. The current through the resistance 150Omega is

Assuming that the silicon diode having resistance of 20 Omega , the current through the diode is (knee voltage 0.7 V)

In a p-n junction diode, the current I can be expressed as I= I_(0) "exp" ((eV)/(2k_(B)T)-1) where I_(0) is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k_(B) is the Boltzmann constant (8.6 xx 10^(–5) eV//K) and T is the absolute temperature. If for a given diode I_(0) = 5 xx 10^(-12) A and T = 300 K, then (a) What will be the forward current at a forward voltage of 0.6 V? (b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V? (c) What is the dynamic resistance? (d) What will be the current if reverse bias voltage changes from 1 V to 2 V?

Explain forward bias and reverse bias of the junction diode.

In a p-n junction diode, the current I can be expressed as I= I_(0) "exp" ((eV)/(k_(B)T)-1) where I_(0) is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k_(B) is the Boltzmann constant (8.6 xx 10^(–5) eV//K) and T is the absolute temperature. If for a given diode I_(0) = 5 xx 10^(-12) A and T = 300 K, then (a) What will be the forward current at a forward voltage of 0.6 V? (b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V? (c) What is the dynamic resistance? (d) What will be the current if reverse bias voltage changes from 1 V to 2 V?