What will be conductance of pure sillicon crystal at 300 K temp? if electron hole pairs per `cm^(3)` is `1.072xx10^(10)` at this temp. `mu_(n)=1350 cm^(2)//"volt"` sec and `mu_(p)=480 cm^(2)//"volt"` sec-

What will be conductivity of pure sillicon crystal at 300 K temp? if electron hole pairs per cm^(3) is 1.072xx10^(10) at this temp. mu_(n)=1350 cm^(2)//"volt" sec and mu_(p)=480 cm^(2)//"volt" sec-

What will be conductivity of pure silicon crystal at 300 K temperature .If electron hole pairs per cm^(3) is 2 x 10^(10) at this temperature ,µe=1350 cm^(2) /volt-sec and ,µh=480 cm^(2) /volt-sec

In a semiconductor the concentrations of electrons and holes are 8xx10^(18)//m^(3) and 5xx10^(18)//m^(3) respectively. If the mobilities of electrons and hole are 2.3m^(2)/"volt-sec" and 0.01m^(2)//"volt-sec" respectively, then semiconductor is-

In semiconductor the concentrations of electron and holes are 8xx10^(18)//m^(3) and 5xx10^(18)//m respectively. If the mobilities of electrons and hole are 2.3 m^(2)// volt-sec and 0.01m^(2)// volt-sec respectively, then semicondutor is

(a) Find the conductivity of intrinsic silon at 300K . It is given that n_(i) at 300K in silicon is 1.5x10^(10)//cm ^(3) and the mobilities of electrons and holes in silicion are 1300cm^(2)//V-sec and 500 cm^(2)//V-sec respectively. (b) if donor type impurity is added to the extent of 1 impurity atom in 10^(8) sillicon atoms, find the conductivity. (c ) if acceptor inpurity is added to the extent of 1 impurity atom in 10^(8) silicon atoms,find the conductivuity. Given: number of atoms//m^(3) for Si=5xx10^(28)

A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area 1cm^(2) and thickness 0.5 mm. if the concentration of electrons in Ge is 2xx10^(19)//m^(3) and mobilities of electrons and holes are 0.36 (m^(2))/("volt-sec") and 0.14(m^(2))/("volt-sec") respectivity, then the current flowing through the plate will be-