In sample of pure silicon `10^(13) "atom"//cm^(3)` is mixed of phosphorus. If all doner atoms are active then what will be resistivity at `20^(@)C` if mobility of electron is `1200 cm^(2)//"Volt"` sec :-

The number density of electron is a semiconductor is 8xx10^(13) cm^(-3) and number density of hole is 5xx10^(12) cm^(-3) then, (1) Which type of this semiconductor is? (2) How much is resistivity of it? (Mobility of electron is 23000 cm^(2)V^(-1)s^(-1) and mobility of hole is 100 cm^(2)V^(-1)s^(-1) and e=1.6xx10^(-19)C )

In a pure silicon (n_(i)=10^(16)//m^(3)) crystal at 300K, 10^(21) atoms of phosphorus are added per cubic meter. The new hole concentration will be

In a pure silicon (n_(i)=10^(16)//m^(3)) crystal at 300K, 10^(21) atoms of phosphorus are added per cubic meter. The new hole concentration will be

In a pure silicon (n_(i)=10^(16)m^(-3)) crystal at 300 K, 10^(23) atoms of phosphorus are added per cubic meter. The new whole concentration will be

A semiconductor is known to have an electron concentration of 5xx10^(12) cm^(-3) and a hole concentration 8xx10^(13)cm^(-3) Is the semi-conductor n-type or p-type? What is the resistivity of the sample, if the electron mobility is 23,000 cm^(2) V^(-1)s^(-1) ? Take charge on electron, e=1.6xx10^(-19) C .

A semiconductor is known to have an electron concentration of 8 xx 10^(13) cm^(-3) and a hole concentration of 5 xx 10^(12) cm^(-3) . a . Is the semiconductor n- type of p-type ? b. What is the resistitivity of the simple , if the electron mobility is 23,000 cm^(2) V^(-1) s^(-1) and hole mobility is 100 cm^(2) V^(-1) s^(-1) ? Take charge on electron , e = 1.6 xx 10^(-19) C .