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The dominant mechanisms for motion of ch...

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon `P-N` junction are

A

drift in forward bias, diffusion in reverse bias

B

diffusion in forward bias, drift in reverse bias

C

diffusion in both forward and reverse bias

D

drift in both forward and reverse bias

Text Solution

Verified by Experts

The correct Answer is:
B

In p-n junction, the diffusion of majority carriers takes place when junction is forward biased and drifting of minority carriers takes place across the junction, when it is reverse biased.
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Knowledge Check

  • Assertion:The dominant mechanism for motion of charge carriers in forward and reverse biased silicon P-N junction are drift in both forward and reverse biase. Reason: In reverse biasing, no current flow through the junction.

    A
    If both the assertion and reason are true and reason is a true explantion of the assertion.
    B
    If both the assertion and reason are true but the reason is not true the correct explantion of the assertion.
    C
    If the assertion is true but reason false
    D
    If both the assertion and reason are false.
  • The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N juntions are-

    A
    Drift in forward bias, diffusion in reversebias
    B
    Diffusion in forward bias, drift in reverse bias
    C
    Diffusion in both forward and reverse bias
    D
    Drift in both forward and reverse bias
  • Assertion : The dominant mechanism for motion of charge carreis in forward and reverse biased silicon P-N junction are drit in both forward and reverse bias. Reaon : In reverse biasing, no current flow through the junction.

    A
    If both assertion and reason are true and the reason is the correct explanation of the assertion
    B
    If both assertion and reason are true but the reason is not the correct explanation of the assertion
    C
    If assertio is true statement but reason is false.
    D
    If both assertion and reason are false statement
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    The approximate ratio of resistance in the forward and reverse biase of the PN- junction diode is