The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon `P-N` junction are

Options

A. drift in forward bias, diffusion in reverse bias
B. diffusion in forward bias, drift in reverse bias
C. diffusion in both forward and reverse bias
D. drift in both forward and reverse bias

Answer

B

Explanation

In p-n junction, the diffusion of majority carriers takes place when junction is forward biased and drifting of minority carriers takes place across the junction, when it is reverse biased.