A photodetectore is made from a semiconductor. In `_(0.53)Ga_(-0.47)`As whith `E_(g)=0.73 eV`, what is the maximum wavelength which it can detect?

A photodiode is made froma semiconductor In_(0.53) Gu_(0.47)A_(s), with E_(g)=0.73eV .What is the maximum wavelength which it can detect ? h=6.63xx10^(-34)J_(s)

A photodiode is made froma semiconductor In_(0.53) Gu_(0.47)A_(s), with E_(g)=0.73eV .What is the maximum wavelength which it can detect ? h=6.63xx10^(-34)J_(s)

A photodetector is made from a compound semiconductor with band gap 0.73eV. The maximum wavelength it can detect is

A photodetector is made from a compound semiconductor with band gap 0.73eV. The maximum wavelength it can detect is

A photodetector is made from a compound semiconductor with band gap 0.73eV. The maximum wavelength it can detect is

The maximum wavelength which a photodiode can detect with E_g =0.74eV is

Assertion: A P-N photodiode is made from a semiconductor for which E_(g)=2.8 eV . This photo diode will not detect the wavelength of 6000 nm . Reason: A PN photodiode detect wavelength lambda if (hc)/(lambda)gtE_(g) .

The maximum wavelength which a photodiode can detect with E_g=0.74 eV is,

A p - n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Which of the following wavelengths it can detect?