In a p-n junction, the depletion region is 400nm wide and and electric field of `5xx10^5Vm_(-1)`exists in it (a)Find the geight of the potential barrier, (b)What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?

The width of depletion region in a P-N junction diode is 500 nm and an intense electric field of 5xx10^(5)Vm^(-1) is also found to exit init. Determine the height of the potential barrier. Also calculate the kinetic energy which a conduction electron must have inorder to diffuse from the n-side to p-side.

In a p-n junction the depletion region is 400 nm wide and electric field of 5 xx 10^(5) Vm^(-1) exists in it. The minimum energy of a conduction electron, which can diffuse from n-side to the p-side is.

The width of depletion region in p-n junction diode is 500 nm and an intrinsic electric field of 6xx 10^(5) Vm^(-1) is also found to exist in it. What is the kinetic energy which a conduction electron must have in order to diffuse from the n-side to p-side?

The width of depletion region in p-n junction diode is 500 nm and an intrinsic electric field of 6xx 10^(5) Vm^(-1) is also found to exist in it. What is the kinetic energy which a conduction electron must have in order to diffuse from the n-side to p-side?