A `N`-type silicon sample of width `4xx10^(-3)m`, thickness and length `6xx10^(-2)m` carriers a current of `4.8mA`, when the voltage is applied across the length of the sample. The free electron density is `10^(22)m^(-3)`

A n-type silicon sample of width 4xx10^(-3)m , thickness 25xx10^(-5)m and length 6xx10^(-2)m carries a current of 4.8 mA when the voltage is applied across the length of the sample. If the free electron density is 10^(22)m^(-3) , then find how much time does it take for the electrons to travel the full length of the sample? Given that charge on an electron e=1.6xx10^(-19)C

A n-type silicon sample of width 4 xx 10^(-3)m , thickness 25 xx 10^(-5)m and length 6 xx 10^(-2)m carries a current of 4.8 mA when the voltage is applied across the length of the sample. If the free electron density is 10^(22)m^(-3) , then find how much time does it take for the electrons to travel the full length of the sample? Given that charge on an electron e=1.6 xx 10^(-19)C

An n-type semiconductors has 4 xx 10^(-3) m width, 25 xx 10^(-5) m thickness and 6 xx 10^(-2) m length. 4.8 mA current is flowing through it. Here voltage is applied parallel to the length of the semiconductor. Calculate the current density. The density of the free electron is equal to 10^(22) m^(-3) .What will be the time taken by the electron across the length of the semiconductor ?