The width of forbidden gap in silicon crystal is `1.1 eV`. When the crystal is converted into a `N`-type semiconductor the distance of Fermi level from conduction band is

The width of forbidden gap in silicon crystal is 1.2 ev . When the crystal is converted into a n-type semiconductor the distance of fermi level from conduction band is Greater than 0.55 eV

How can an n-type semiconductor be obtained from a pure crystal of germanium ?

How can an n-type semiconductor be obtained from a purse crystal of Germanium ?

Which of the following , when doped into a crystal of ultrapurified germanium , will convert it into a p - type semiconductor ?

Which of the following , when doped into a crystal of ultrapurified germanium , will convert it into a p - type semiconductor ?