The conductivity of a pure semiconductor is roughly proportional to `T^3/2 e^(-Delta E//2kT)where `(Delta)E`is the band gap.The band gap for germanium is 0.74eV at 4K and 0.67eV at 300K.By what factor does the conductivity of pure germanium increase as the temperature is raised form 4K to 300K?

The work function of a thermionic emitter is 4.5 eV . By what factor does the thermionic current increase if its temperature is raised from 1500 K to 2000 K ?

The work function of a thermionic emitter is 4.5 eV . By what factor does the thermionic current increase if its temperature is raised from 1500 K to 2000 K ?

The conductivity of an intrinsic semiconductor depends on temperature as (sigma)=(sigma_0)e^(-Delta E//2kT), where (sigma_0) is a constant. Find the temperature at which the conductivity of an intrinsic germanium semiconductor will be double of its value at T=300 K .Assume that the gap for germanium is 0.650 eV and remains constant as the temperature is increased.

The conductivity of an intrinsic semiconductor depends of tempareture as (sigma)=(sigma_0)e^(-Delta E//2kT), where (sigma_0) is a constant.find the temperature at which the conductivity of an imtrinsic germanium semoconductor will be double of its value at T=300 K .Assume that the gap for germanium is 0.650 eV and remains constant as the temperature os increased.

The band gap in germanium is (Delta E=0.68eV.) .Assuming that the number of hole-electron pairs is proportional to e^(-Delta E//2kT),find the percentage increase in the number of charge carries in pure germanium as the temperature is increased form 300K to 320K.

The band gap in germanium is (Delta E=0.68eV.) .Assuming that the number of hole-electron pairs is proportional to e^(-Delta E//2kT),find the percentage increase in the number of charge carries in pure germanium as the temperature is increased form 300K to 320K.

The band gap in germanium is (Delta E=0.68eV.) .Assuming that the number of hole-electron pairs is proportional to e^(-Delta E//2kT),find the percentage increase in the number of charge carries in pure germanium as the temperature is increased form 300K to 320K.

Assume that the number of hole-electron pair in an intrinsic semiconductor is proportional to e^(- Delta E//2KT) . Here Delta E = energy gap and k=8.62 xx 10^(-5) eV//"kelvin" The energy gap for silicon is 1.1 eV . The ratio of electron hole pairs at 300 K and 400 K is :