The conductivity of an intrinsic semiconductor depends of tempareture as`(sigma)=(sigma_0)e^(-Delta E//2kT),`where `(sigma_0)`is a constant.find the temperature at which the conductivity of an imtrinsic germanium semoconductor will be double of its value at T=300 K .Assume that the gap for germanium is 0.650 eV and remains constant as the temperature os increased.

The conductivity of an intrinsic semiconductor depends on temperature as (sigma)=(sigma_0)e^(-Delta E//2kT), where (sigma_0) is a constant. Find the temperature at which the conductivity of an intrinsic germanium semiconductor will be double of its value at T=300 K .Assume that the gap for germanium is 0.650 eV and remains constant as the temperature is increased.

The temperature at which the root mean squres speed of a gas will be half its value at 0^(@)C is (assume the pressure remains constant)

The temperature at which the root mean squres speed of a gas will be half its value at 0^(@)C is (assume the pressure remains constant)

The conductivity of a pure semiconductor is roughly proportional to T^3/2 e^(-Delta E//2kT)where (Delta)E is the band gap.The band gap for germanium is 0.74eV at 4K and 0.67eV at 300K.By what factor does the conductivity of pure germanium increase as the temperature is raised form 4K to 300K?

The conductivity of a pure semiconductor is roughly proportional to T^(3/2) e^(-Delta E//2kT) where (Delta)E is the band gap. The band gap for germanium is 0.74eV at 4K and 0.67eV at 300K.By what factor does the conductivity of pure germanium increase as the temperature is raised form 4K to 300K?

The conductivity of a pure semiconductor is roughly proportional to T^(3/2) e^(-Delta E//2kT) where (Delta)E is the band gap. The band gap for germanium is 0.74eV at 4K and 0.67eV at 300K.By what factor does the conductivity of pure germanium increase as the temperature is raised form 4K to 300K?

Let (Delta)E denote the energy gap between the valence band and the conduction band.The population of conduction electrons (and of the holes)is roughly proportional to e^(-Delta E//2kT). Find the ratio of the concentration of conduction electrons in diamond to that in silicon at room tempareture 300K. (Delta E) for silicon is 1.1 ev and for diamond is 6.0eV.How many conduction electrons are likely to be in one cubic meter of diamond ?

Let (Delta)E denote the energy gap between the valence band and the conduction band.The population of conduction electrons (and of the holes)is roughly proportional to e^(-Delta E//2kT). Find the ratio of the concentration of conduction electrons in diamond to that in silicon at room tempareture 300K. (Delta E) for silicon is 1.1 ev and for diamond is 6.0eV.How many conduction electrons are likely to be in one cubic meter of diamond ?

Let (Delta)E denote the energy gap between the valence band and the conduction band.The population of conduction electrons (and of the holes)is roughly proportional to e^(-Delta E//2kT). Find the ratio of the concentration of conduction electrons in diamond to that in silicon at room tempareture 300K. (Delta E) for silicon is 1.1 ev and for diamond is 6.0eV.How many conduction electrons are likely to be in one cubic meter of diamond ?

In an intrinsic semiconductor, the energy gap E_(g) of an intrinsic semiconductor is 1.2 eV. Its hole mobility is very much smaller than electron mobility and is indepndent of temperature. What is the ratio between conductivity at 600K and at 300K? Assume that the temperature dependence of intrinsic concentraction n_(i) is expressed as, n_(i)=n_(o)e^(-E_(g)^(')//k_B)T , where n_(o) is constant and E_(g)^(') is an energy equal to E_(g)//2 , k_(B)=8.62xx10^(-6)eVK^(-1) .