Pure Si at 400K has equal electron `(n_(e))` and hole `(n_(h))` concentrations of `3xx10^(16)m^(-3)`. Doping by indium, `n_(h)` increases to `6xx10^(22)m^(-3)`. Calculate `n_(e)` in the doped Si.

Explanation

To solve the problem, we need to find the electron concentration \( n_e \) in doped silicon after doping with indium, given the hole concentration \( n_h \) and the intrinsic carrier concentration \( n_i \).

### Step-by-Step Solution:

1. **Identify the given values:**
- Intrinsic electron and hole concentration in pure silicon at 400K:
\[
n_i = n_h = n_e = 3 \times 10^{16} \, \text{m}^{-3}
...